n14. Selecting reference transistor for bias regulator construction


Choosing proper reference transistors for a bias regulator



It is important know that the sense device (Q1) hasn't too high BE-voltage. In principle it should be as equal as possible to the RF device, but it is often not possible to check this, so it must at least work some way when the power amplifier is starting to be tested. Some may have much higher than you think, BUY49 has 0.8V, and as such is impossible to use here. The power device should have high gain to avoid loading the collector voltage of Q1, and as such varying the collector current. R2 may be used for minimum adjustment of output voltage.
BE-voltage (open collector) for varying base current over some time at 288K (bold vs normal for 293C) for possible devices to be used as sensing devices.
Q1 should be mounted thermically as close as possible to the RF power device, and Q2 should be mounted farther away from the reference device so it does not add to the temperature, another idea is to use lower supply voltage for Q2 to decrease the heat further.

  Base current  
Device (Q1) 10mA 0.7mA
2SD235 600-643 543mV
D44VH11 663-676 598
MJE340 663-676 572
TIP29C 640-663 546
TIP31B 625-640 534
TIP41A 646-662 546

BC547B ........814........../...688mV

Later found BD135 to be fb for reference device, and BDX33 (BDX53) to be most suitable to use in the regulator, they are used in a Skanti 500W HF amplifier.

n12 Choosing ferrite cores for linear amplifier (LA7MI)

n15 40W FET linear amplifier (LA7MI)
d28 Nokia NMT450 100/200W amplifier for 70cm band (Norwegian text)



BACK

Updated: 2005.03.14